FZT948(1995) View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

Manufacturer

FZT948
(Rev.:1995)

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

Diodes Incorporated. 

FZT948

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown V(BR)CBO -40 -55

Voltage

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

V(BR)CER -40

-55

V

IC=-1µA, RB ≤1kΩ

Collector-Emitter

Breakdown Voltage

V(BR)CEO -20

-30

V

IC=-10mA*

Emitter-Base Breakdown

V(BR)EBO -6

-8

Voltage

V

IE=-100µA

Collector Cut-Off Current

ICBO

Collector Cut-Off Current

ICER

R ≤1kΩ

Emitter Cut-Off Current

IEBO

Collector-Emitter Saturation VCE(sat)

Voltage

Base-Emitter

Saturation Voltage

VBE(sat)

-50 nA

-1

µA

-50 nA

-1

µA

-10 nA

-60 -130 mV

-110 -180 mV

-200 -280 mV

-360 -450 mV

-1050 -1200 mV

VCB=-30V

VCB=-30V,

Tamb=100°C

VCB=-30V

VCB=-30V,

Tamb=100°C

VEB=-6V

IC=-0.5A, IB=-10mA*

IC=-2A, IB=-200mA*

IC=-4A, IB=-400mA*

IC=-6A, IB=-250mA*

IC=-5A, IB=-300mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-870 -1050 mV IC=-6A, VCE=-1V*

Static Forward

hFE

Current Transfer Ratio

Transition Frequency

fT

100 200

100 200 300

75

160

60

130

15

40

IC=-10mA, VCE =-1V

IC=-1A, VCE =-1V*

IC=-5A, VCE =-1V*

IC=-10A, VCE =-1V*

IC=-20A, VCE =-2V*

80

MHz IC=-100mA, VCE=-10V

f=50MHz

Output Capacitance

Cobo

163

pF

Switching Times

ton

toff

120

ns

126

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

RCE(sat)46mΩ at 5A

VCB=-10V, f=1MHz

IC=-4A, IB1=-400mA

IB2=400mA, VCC=-10V

TBA

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