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FZT953(2000) View Datasheet(PDF) - Diodes Incorporated.

Part Name
Description
Manufacturer
FZT953 Datasheet PDF : 5 Pages
1 2 3 4 5
FZT951
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -100 -140
V
IC=-100A
Collector-Emitter Breakdown
Voltage
V(BR)CER
-100 -140
V
IC=-1A, RB1k
Collector-Emitter Breakdown V(BR)CEO -60
-90
Voltage
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-6
-8
V
IE=-100A
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICER
R 1k
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-50 nA
-1
A
-50 nA
-1
A
-10 nA
-20 -50 mV
-85 -140 mV
-155 -210 mV
-370 -460 mV
-1080 -1240 mV
VCB=-80V
VCB=-80V, Tamb=100°C
VCB=-80V
VCB=-80V, Tamb=100°C
VEB=-6V
IC=-100mA, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-5A, IB=-500mA*
IC=-5A, IB=-500mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-935 -1070 mV IC=-5A, VCE=-1V*
Static Forward
Current Transfer Ratio
Transition Frequency
hFE
100 200
100 200 300
75
90
10
25
IC=-10mA, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
fT
120
MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
74
pF
Switching Times
ton
toff
82
ns
350
ns
* Measured under pulsed conditions. Pulse width =300s. duty cycle  2%
Spice parameter data is available upon request for this device
VCB=-10V, f=1MHz
IC=-2A, IB1=-200mA
IB2=200mA, VCC=-10V
3 - 280

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