FAN7383 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FAN7383 Datasheet PDF : 16 Pages
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Electrical Characteristics
VBIAS (VDD, VBS) = 15.0V, RDT = GND, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are
referenced to GND. The VO and IO parameters are referenced to VS and GND and are applicable to the respective
outputs HO and LO.
Symbol
Parameter
Condition
SUPPLY CURRENT SECTION
IQBS Quiescent VBS supply current
IQDD
ISD(5)
Quiescent VDD supply current
VDD supply current at shutdown mode
IPBS Operating VBS supply current
IPDD Operating VDD supply current
ILK Offset supply leakage current
POWER SUPPLY SECTION
VDDUV+ VDD and VBS supply under-voltage
VBSUV+ positive going threshold
VDDUV- VDD and VBS supply under-voltage
VBSUV- negative going threshold
VDDUVH VDD and VBS supply under-voltage
VBSUVH lockout hysteresis
GATE DRIVER OUTPUT SECTION
VOH High-level output voltage, VBIAS-VO
VOL Low-level output voltage, VO
IO+ Output high short-circuit pulse current
IO- Output low short-circuit pulsed current
VS
Allowable negative VS pin voltage for IN
signal propagation to HO
VIN=0V or 5V
VIN=0V or 5V, RDT=0Ω
SD=GND
fIN=20kHz,rms value
fIN=20kHz,rms value, RDT=0Ω
VB=VS=600V
IO=20mA
VO=0V, VIN=5V with PW<10µs
VO=15V, VIN=0V with PW<10µs
LOGIC INPUT SECTION (INPUT AND SHUTDOWN)
VIH Logic "1" input voltage
VIL Logic "0" input voltage
IIN+ Logic "1" input bias current
VIN=5V
IIN- Logic "0" input bias current
VIN=0V
SD+ Shutdown "1" input voltage
SD- Shutdown "0" input voltage
RPD Input pull-down resistance
Note:
5.This parameter guaranteed by design.
Min. Typ. Max. Unit
35 90
650 900
650 900
μA
400 700
950 1200
10
10.7 11.6 12.5
10.0 10.8 11.6 V
0.8
1.0 V
0.6 V
250 350
mA
500 650
mA
-9.8 -7.0 V
2.9
V
1.2 V
50 100 μA
2.0 μA
1.2 V
2.9
V
100
KΩ
© 2006 Fairchild Semiconductor Corporation
FAN7383 Rev. 1.0.3
6
www.fairchildsemi.com
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