FDD6635 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDD6635 Datasheet PDF : 8 Pages
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Typical Characteristics
10
ID = 15A
8
6
VDS = 10V
15V
20V
4
2
0
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
RDS(ON) LIMIT
100
10
1
VGS = 10V
SINGLE PULSE
0.1
RθJA = 96oC/W
TA = 25oC
100µs
10s
DC
1ms
10ms
100ms
1s
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
100
SINGLE PULSE
RθJA = 96癈 /W
80
TA = 25癈
60
40
20
0
0.1
1
10
100
t1, TIME (sec)
1000
Figure 11. Single Pulse Maximum Peak
Current
2000
f = 1MHz
VGS = 0 V
1600
CISS
1200
800
400
0
0
COSS
CRSS
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
100
SINGLE PULSE
80
RθJA = 96°C/W
TA = 25°C
60
40
20
0
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation
1000
TJ = 25oC
100
10
1
0.001
0.01
0.1
1
10
tAV, TIME IN AVANCHE(ms)
Figure 12. Unclamped Inductive Switching
Capability
FDD6635 Rev. C2(W)
www.fairchildsemi.com
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