FDD5N50 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDD5N50 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDD5N50
Device
FDD5N50TM
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
FDD5N50
FDD5N50TM_WS
D-PAK
380mm
16mm
FDD5N50
FDD5N50TF
D-PAK
380mm
16mm
Quantity
2500
2500
2000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
500
ID = 250A, Referenced to 25oC
-
VDS = 500V, VGS = 0V
-
VDS = 400V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 2A
-
gFS
Forward Transconductance
VDS = 20V, ID = 2A
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 5A
VGS = 10V
-
-
-
-
-
(Note 4)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 5A
RG = 25
-
-
-
(Note 4)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 4A
-
trr
Reverse Recovery Time
VGS = 0V, ISD = 5A
-
Qrr
Reverse Recovery Charge
dIF/dt = 100A/s
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 32mH, IAS = 4A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.6
-
-
-
-
1.15
4.3
480
66
5
11
3
5
13
22
28
20
-
-
-
300
1.8
Max. Unit
-
-
1
10
±100
V
V/oC
A
nA
5.0
V
1.4
-
S
640 pF
88
pF
8
pF
15
nC
-
nC
-
nC
36
ns
54
ns
66
ns
50
ns
4
A
16
A
1.4
V
-
ns
-
C
©2008 Fairchild Semiconductor Corporation
2
FDD5N50 Rev. C0
www.fairchildsemi.com
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