FDR840 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDR840 Datasheet PDF : 5 Pages
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Typical Characteristics
5
ID = -10A
4
3
2
1
0
0
10
VDS = -5V
-10V
-15V
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
10µs
100µs
1ms
10ms
100ms
1s
VGS = -4.5V
DC
0.1
SINGLE PULSE
RθJA =135oC/W
TA = 25oC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
7000
6000
5000
4000
3000
2000
1000
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
SINGLE PULSE
RθJA =135oC/W
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
P(pk)
t1
TJ - TA =t2P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
FD840P Rev C1(W)
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