FDS6984SQ1 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDS6984SQ1 Datasheet PDF : 9 Pages
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Typical Characteristics: Q2
50
VGS = 10V
40
6.0V 5.0V
4.5V
30
20
4.0V
10
0
0
3.5V
1
2
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.9
ID = 10A
VGS = 10V
1.6
1.3
1
0.7
0.4
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
50
VDS = 5V
40
30
TA = -55oC
25oC
125oC
20
10
0
1.5
2.5
3.5
4.5
5.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.6
VGS = 4.0V
2.2
1.8
4.5V
5.0V
1.4
6.0V
1
8.0V
10V
0.6
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
0.05
0.04
0.03
0.02
0.01
0
2
ID = 5A
TA = 125oC
TA = 25oC
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0
0.2
0.4
0.6
0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6680S Rev C (W)
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