FDS6984SQ1 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDS6984SQ1 Datasheet PDF : 9 Pages
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Typical Characteristics Q1
10
ID = 4.6A
8
6
4
2
0
0
2
VDS = 5V
10V
15V
4
6
8
10
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
700
600
500
400
300
200
100
0
0
f = 1MHz
VGS = 0 V
CISS
COSS
CRSS
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
100
RDS(ON) LIMIT
10
100µs
1ms
10ms
100ms
1
1s
10s
DC
0.1
0.01
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
30
20
10
0
0.01
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
0.1
1
10
100
t1, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.5
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t 1, TIME (s ec)
R θJA (t) = r(t) * R θJA
R θJA = 135°C/W
P(pk )
t1 t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 /t2
10
100
300
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680S Rev C (W)
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