FDS6986AS_NL View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDS6986AS_NL Datasheet PDF : 10 Pages
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Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 22 shows the
reverse recovery characteristic of the FDS6986AS.
12.5nS/DIV
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
0.001
0.0001
125oC
100oC
0.00001
25oC
0.000001
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
Figure 22. FDS6986AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
12.5nS/DIV
Figure 23. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
FDS6986AS Rev A (X)
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