FDS8949(2006) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDS8949 Datasheet PDF : 6 Pages
| |||
October 2006
FDS8949
tm
Dual N-Channel Logic Level PowerTrench® MOSFET
40V, 6A, 29mΩ
Features
„ Max rDS(on) = 29mΩ at VGS = 10V
„ Max rDS(on) = 36mΩ at VGS = 4.5V
„ Low gate charge
„ High performance trench technology for extremely low
rDS(on)
„ High power and current handling capability
„ RoHS compliant
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild
Semiconductor’s advanced
PowerTrench® process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
„ Inverter
„ Power suppliers
D2
D2
D1
D1
SO-8
Pin 1
G2
S2
G1
S1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Drain-Source Avalanche Energy
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ, TSTG Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
RθJA
Thermal Resistance-Single operation, Junction to Ambient
RθJA
Thermal Resistance-Single operation, Junction to Ambient
RθJC
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1)
Device Marking
FDS8949
Device
FDS8949
Reel Size
13’’
Tape Width
12mm
Ratings
40
±20
6
20
26
2
1.6
0.9
-55 to 150
Units
V
V
A
mJ
W
°C
81
135
°C/W
40
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS8949 Rev. B1
www.fairchildsemi.com
Share Link: 