FDS4885C View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDS4885C Datasheet PDF : 8 Pages
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Typical Characteristics: Q1 (N-Channel)
20
VGS = 10V
16
8.0V
12
7.0V
6.5V
8
6.0V
4
5.5V
0
0
0.25
0.5
0.75
1
1.25
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
4.2
3.8
3.4
VGS = 6.0V
3
2.6
2.2
6.5V
1.8
7.0V
1.4
8.0V
1
0.6
0
4
8
12
ID, DRAIN CURRENT (A)
10V
16
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 7.5A
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.075
0.065
ID = 3.8A
0.055
0.045
0.035
TA = 125oC
0.025
0.015
5
TA = 25oC
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
VDS = 5V
45
40
35
TA = -55oC
25oC
125oC
30
25
20
15
10
5
0
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
0.001
TA = 125oC
25oC
-55oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4885C Rev D(W)
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