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Part Name
Description
FGA180N33ATDTU View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FGA180N33ATDTU
330 V PDP Trench IGBT
Fairchild Semiconductor
FGA180N33ATDTU Datasheet PDF : 9 Pages
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Electrical Characteristics of the Diode
T
C
= 25°C unless otherwise noted
Symbol
Parameter
V
FM
Diode Forward Voltage
t
rr
Diode Reverse Recovery Time
I
rr
Diode Peak Reverse Recovery Cyrrent
Q
rr
Diode Reverse Recovery Charge
Test Conditions
I
F
= 20A
I
ES
=20A,
dI/dt = 200A/
µ
s
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
Min.
-
-
-
-
-
-
-
-
Typ.
1.2
1.04
27
39
3.5
6.0
48
117
Max
1.6
-
-
-
-
-
-
-
Unit
V
ns
A
nC
©2011 Fairchild Semiconductor Corporation
3
FGA180N33ATD Rev. C0
www.fairchildsemi.com
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