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Part Name
Description
FGP7N60RUFDTU(2006_01) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FGP7N60RUFDTU
(Rev.:2006_01)
600V, 7A RUF IGBT CO-PAK
Fairchild Semiconductor
FGP7N60RUFDTU Datasheet PDF : 9 Pages
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Electrical Characteristics of DIODE
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
V
FM
Diode Forward Voltage
I
F
= 7A
T
C
= 25
°
C
T
C
= 100
°
C
t
rr
Diode Reverse Recovery Time
I
F
= 7A
T
C
= 25
°
C
dI/dt = 200 A/
µ
s
T
C
= 100
°
C
I
rr
Diode Peak Reverse Recovery Current
T
C
= 25
°
C
T
C
= 100
°
C
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
°
C
T
C
= 100
°
C
Min.
--
--
--
--
--
--
--
--
Typ.
1.65
1.58
50
58
2.5
3.3
62.5
95.7
Max.
2.1
--
65
--
3.75
--
122
--
Units
V
ns
A
nC
3
FGP7N60RUFD Rev. A
www.fairchildsemi.com
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