FGPF50N30T View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FGPF50N30T Datasheet PDF : 7 Pages
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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
30A
4
50A
IC = 15A
0
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 100V
9
200V
6
3
0
0
25
50
75
100
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
400
tr
100
10
0
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
20
40
60
80
100
Gate Resistance, RG [Ω]
Figure 8. Capacitance Characteristics
10000
Common Emitter
VGE = 0V, f = 1MHz
Cies
TC = 25oC
1000
Coes
Cres
100
50
1
10
30
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
500
100
10µs
100µs
10
1ms
10 ms
1
Single Nonrepetitive
0.1 Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
DC
100 500
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5500
1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
td(off)
tf
100
10
0
20
40
60
80
100
Gate Resistance, RG [Ω]
FGPF50N30T Rev. A
4
www.fairchildsemi.com
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