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FM1100-N View Datasheet(PDF) - PACELEADER INDUSTRIAL

Part Name
Description
Manufacturer
FM1100-N
PACELEADIER
PACELEADER INDUSTRIAL PACELEADIER
FM1100-N Datasheet PDF : 3 Pages
1 2 3
FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
SOD-323
0.106 (2.7)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.016(0.4) Typ.
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
FEATURES
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Very tiny plastic SMD package.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MECHANICAL DATA
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-323
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.008 gram
MAXIMUM RATING (AT TA=25oC unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
See Fig.1
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25 OC
VR = VRRM TA = 125 OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO
1.0
A
IFSM
30
A
IR
RèJA
CJ
TSTG
0.5
mA
10
90
OC/W
120
pF
-65
+175 OC
SYMBOLS
FM120-N
FM130-N
FM140-N
FM150-N
FM160-N
FM180-N
FM1100-N
*1
VRRM
(V)
20
30
40
50
60
80
100
*2
VRMS
(V)
14
21
28
35
42
56
70
*3
VR
(V)
20
30
40
50
60
80
100
*4
VF
(V)
0.55
0.70
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
www.paceleader.tw
1
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage

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