FMW20N60S1HF View Datasheet(PDF) - Fuji Electric

Part Name

Description

Manufacturer

FMW20N60S1HF

N-Channel enhancement mode power MOSFET

Fuji Electric 

http://www.fujielectric.com/products/semiconductor/

BVDSS

VGS(th)

IDSS

IGSS

RDS(on)

RG

gfs

Ciss

Coss

Crss

Co(er)

Co(tr)

td(on)

tr

td(off)

tf

QG

QGS

QGD

QSW

IAV

VSD

trr

Qrr

Irp

ID=250μA

VGS=0V

ID=250μA

VDS=VGS

VDS=600V

VGS=0V

VDS=480V

VGS=0V

VGS= ± 30V

VDS=0V

ID=10A

VGS=10V

f=1MHz, open drain

ID=10A

VDS=25V

VDS=10V

VGS=0V

f=1MHz

VGS=0V

VDS=0…480V

VGS=0V

VDS=0…480V

ID=constant

VDD=400V, VGS=10V

ID=10A, RG=27Ω

See Fig.3 and Fig.4

VDD=480V, ID=20A

VGS=10V

See Fig.5

L=6.02mH,Tch=25°C

See Fig.1 and Fig.2

IF=20A,VGS=0V

Tch=25°C

IF=20A, VGS=0V

VDD=400V

-di/dt=100A/μs

Tch=25°C

See Fig.6

Tch=25°C

Tch=125°C

Note *6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS.

Note *7 : Co(tr) is a fixed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 80% BVDSS.

Rth(ch-c)

Rth(ch-a)

600

-

-

V

2.5

3

3.5

V

-

-

25

μA

-

-

250

-

10

100

nA

-

0.161

0.19

Ω

-

3.7

-

Ω

8.5

17.5

-

S

-

1470

-

-

3120

-

-

280

-

-

90

-

pF

-

305

-

-

22

-

-

40

-

-

162

-

ns

-

22

-

-

48

-

-

12.5

-

-

15

-

nC

-

8

-

6.6

-

-

A

-

0.9

1.35

V

370

-

ns

-

6.2

-

μC

-

32

-

A

0.89

50

°C/W

°C/W

2

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