FQA28N15_F109 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQA28N15_F109 Datasheet PDF : 9 Pages
| |||
Typical Performance Characteristics
Figure 1. On-Region Characteristics
102
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
※ Notes :
100
1. 250µ s Pulse Test
2. TC = 25℃
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
300
240
180
120
60
0
0
VGS = 10V
VGS = 20V
※ Note : TJ = 25℃
20
40
60
80
100
ID , Drain Current [A]
Figure 5. Capacitance Characteristics
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
175℃
25℃
100
10-1
2
-55℃
※ Notes :
1. V = 40V
DS
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
175℃
10-1
0.2
0.4
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 30V
VDS = 75V
8
VDS = 120V
6
4
2
※ Note : ID = 28 A
0
0
9
18
27
36
45
QG, Total Gate Charge [nC]
3
FQA28N15 / FQA28N15_F109 Rev. A1
www.fairchildsemi.com
Share Link: 