FQB6N40C(2013) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQB6N40C Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Part Number
FQB6N40CTM
Top Mark
FQB6N40C
Package
D2-PAK
Packing Method Reel Size
Tape and Reel 330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
400 --
ID = 250 µA, Referenced to 25°C -- 0.54
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3 A
VDS = 40 V, ID = 3 A
2.0 --
-- 0.83
-- 4.7
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 480
-- 80
--
15
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 200 V, ID = 6 A,
RG = 25 Ω
-- 13
-- 65
-- 21
(Note 4)
--
38
VDS = 320 V, ID = 6 A,
-- 16
VGS = 10 V
-- 2.3
(Note 4) --
8.2
--
--
1
10
100
-100
4.0
1
--
625
105
20
35
140
55
85
20
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 6 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 13.7 mH, IAS = 6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 6 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
--
--
6
A
--
--
24
A
--
--
1.4
V
-- 230
--
ns
-- 1.7
--
µC
©2003 Fairchild Semiconductor Corporation
2
FQB6N40C Rev. C0
www.fairchildsemi.com
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