FQB6N40C(2013) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQB6N40C Datasheet PDF : 8 Pages
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VGS
Top : 15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.5
3.0
V = 10V
GS
2.5
2.0
1.5
VGS = 20V
1.0
※ Note : TJ = 25℃
0.5
0
5
10
15
20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
800
600
400
200
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1.
2.
2V5DS0μ=s40PVulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 80V
10
V = 200V
DS
8
VDS = 320V
6
4
2
※ Note : ID = 6A
0
0
5
10
15
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
3
FQB6N40C Rev. C0
www.fairchildsemi.com
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