DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FQB6N40CFTM View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQB6N40CFTM
Fairchild
Fairchild Semiconductor Fairchild
FQB6N40CFTM Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
3.0
2.5
1.1
2.0
1.0
1.5
0.9
Notes :
1.
2.
VGS
ID =
=0V
250 A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
1.0
Notes :
0.5
1. VGS = 10 V
2. ID = 3 A
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
101
100 µs
1 ms
10 ms
100 ms
100
DC
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
6
5
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature []
100
D =0.5
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
s in g le p u ls e
N otes :
1. ZJC(t) = 1.71 /W M ax.
2. D uty Factor, D =t1/t2
3.
T
JM
-
T
C
=
P
DM
*
ZJC(t)
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S quare W ave P ulse D uration [sec]
4
www.fairchildsemi.com
FQB6N40CF Rev. A

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]