FQP2NA90 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQP2NA90 Datasheet PDF : 8 Pages
| |||
Typical Characteristics
101
Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100
Bottom :
6.0 V
5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10
9
8
VGS = 10V
7
VGS = 20V
6
5
4
3
※ Note : TJ = 25℃
2
0
1
2
3
4
5
6
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
900
800
700
600
500
400
300
200
100
0
10-1
C
iss
Coss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss
gd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
VDS = 180V
10
VDS = 450V
8
V = 720V
DS
6
4
2
※ Note : ID = 2.8 A
0
0
4
8
12
16
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, September 2000
Share Link: 