FQP30N06L View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQP30N06L Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number
FQP30N06L
Top Mark
FQP30N06L
Package Packing Method
TO-220
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
60
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C --
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
0.06
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 16 A
VGS = 5 V, ID =16 A
VDS = 25 V, ID = 16 A
1.0 --
2.5
V
-- 0.027 0.035
-- 0.035 0.045
Ω
--
24
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 800 1040 pF
-- 270 350
pF
--
50
65
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 30 V, ID = 16 A,
RG = 25 Ω
--
15
40
ns
-- 210 430
ns
--
60 130
ns
(Note 4)
--
110
230
ns
VDS = 48 V, ID = 32 A,
--
15
20
nC
VGS = 5 V
-- 3.5
--
nC
(Note 4) --
8.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 32 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 32 A,
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 400 μH, IAS = 32 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 32 A, di/dt ≤ 300 A/us, VDD ≤ BVDSS, starting TJ = 25°C.
4.Essentially independent of operating temperature.
--
--
32
A
--
--
128
A
--
--
1.5
V
--
60
--
ns
--
90
--
nC
©2001 Fairchild Semiconductor Corporation
2
FQP30N06L Rev. C1
www.fairchildsemi.com
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