UPD75P048GC-AB8 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

UPD75P048GC-AB8

4-BIT SINGLE-CHIP MICROCOMPUTER

NEC => Renesas Technology 

µPD75P048

SUBSYSTEM CLOCK OSCILLATOR CIRCUIT CHARACTERISTICS

(Ta = -10 to +70°C, VDD = 2.7 to 6.0 V)

Oscillator

Crystal

Recommended

Constants

XT1

XT2

Item

Oscillation

frequency (fXT) Note 1

Conditions

R Oscillation stabiliza- VDD = 4.5 to 6.0 V

tion time Note 2

C3

C4

External Clock

VDD

XT1

XT2

XT1 input frequency

(fXT) Note 1

XT1 input high-,

low-level widths

(tXTH, tXTL)

MIN. TYP. MAX. Unit

32 32.768 35

kHz

1.0

2

s

10

s

32

100

kHz

5

15

µs

Note 1. Indicates only the characteristics of the oscillator circuit. For instruction execution time, refer to AC

Characteristics.

2. Time required for oscillation to stabilize after VDD has reached the minimum value of the oscillation

voltage range.

Caution When using the oscillation circuit of the subsystem clock, wire the portion enclosed in dotted line

in the figures as follows to avoid adverse influences on the wiring capacity:

• Keep the wiring length as short as possible.

• Do not cross the wiring over the other signal lines.

• Do not route the wiring in the vicinity of lines through which a high alternating current flows.

• Always keep the ground point of the capacitor of the oscillator circuit at the same potential as

VDD. Do not connect the ground pattern through which a high current flows.

• Do not extract signals from the oscillation circuit.

The amplification factor of the subsystem clock oscillation circuit is designed to be low to reduce

the current dissipation and therefore, the subsystem clock oscillation circuit is influenced by noise

more easily than the main system clock oscillation circuit. When using the subsystem clock,

therefore, exercise utmost care in wiring the circuit.

20

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