FSDM0465RBWDTU View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FSDM0465RBWDTU Datasheet PDF : 18 Pages
| |||
FSDM0465RB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-source Voltage
Vstr Max Voltage
Pulsed Drain Current (Tc=25°C)(1)
Continuous Drain Current (Tc=25°C) (2)
Continuous Drain Current (Tc=100°C) (2)
Continuous Drain Current* (TDL=25°C)(3)
Single Pulsed Avalanche Energy (4)
Supply Voltage
Input Voltage Range
Total Power Dissipation (Tc=25°C) (2)
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
ESD Capability, HBM Model (All pins
except Vstr and Vfb)
ESD Capability, Machine Model (All pins
except Vstr and Vfb)
Symbol
VDSS
VSTR
IDM
ID
ID*
EAS
VCC
VFB
PD
Tj
TA
TSTG
-
-
Value
650
650
9.6
2.2
1.4
4
-
20
-0.3 to VCC
33
Internally limited
-25 to +85
-55 to +150
2.0
(GND-Vstr/Vfb=1.5kV)
300
(GND-Vstr/Vfb=225V)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tc: Case Back Surface Temperature (With infinite heat sink)
3. TDL: Drain Lead Temperature (With infinite heat sink)
4. L=14mH, starting Tj=25°C2. L=14mH, starting Tj=25°C
Unit
V
V
A
A (rms)
A (rms)
A (rms)
mJ
V
V
W
°C
°C
°C
kV
V
Thermal Impedance
Parameter
Junction-to-Ambient Thermal
Junction-to-Case Thermal
Symbol
θJA
θJC(1)
Notes:
1. Infinite cooling condition - refer to the SEMI G30-88.
Value
-
3.78
Unit
°C/W
°C/W
4
Share Link: 