Electrical Characteristics
TA=25C unless otherwise specified.
Symbol
Parameter
SenseFET Section
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
FSQ0365
RDS(ON)
Drain-Source On- FSQ0265
State Resistance(11) FSQ0165
FSQ321
FSQ0365
FSQ0265
CISS
Input Capacitance
FSQ0165
FSQ321
FSQ0365
COSS
FSQ0265
Output Capacitance
FSQ0165
FSQ321
FSQ0365
CRSS
Reverse Transfer
Capacitance
FSQ0265
FSQ0165
FSQ321
FSQ0365
td(on)
Turn-On Delay
FSQ0265
FSQ0165
FSQ321
FSQ0365
tr
Rise Time
FSQ0265
FSQ0165
FSQ321
FSQ0365
td(off)
Turn-Off Delay
FSQ0265
FSQ0165
FSQ321
FSQ0365
tf
Fall Time
FSQ0265
FSQ0165
FSQ321
Burst-Mode Section
VBURH
VBURL
VBUR(HYS)
Burst-Mode Voltage
Continued on the following page…
Condition
VCC=0V, ID=100µA
VDS=650V
TJ=25C, ID=0.5A
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=25V, f=1MHz
VDD=350V, ID=25mA
VDD=350V, ID=25mA
VDD=350V, ID=25mA
VDD=350V, ID=25mA
TJ=25°C, tPD=200ns(12)
Min. Typ. Max. Unit
650
V
100
µA
3.5
4.5
5.0
6.0
8.0 10.0
14.0 19.0
315
550
pF
250
162
47
38
pF
25
18
9.0
17.0
pF
10.0
3.8
11.2
20.0
ns
12.0
9.5
34
15
ns
4
19
28.2
55.0
ns
30.0
33.0
32
25
ns
10
42
0.45 0.55 0.65
V
0.25 0.35 0.45
V
200
mV
© 2007 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321 • Rev. 1.0.6
6
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