FZT855 View Datasheet(PDF) - Zetex => Diodes
Part Name
Description
Manufacturer
FZT855 Datasheet PDF : 3 Pages
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FZT855
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO 250 375
Voltage
V
IC=100A
Collector-Emitter
Breakdown Voltage
V(BR)CER 250
375
V
IC=1A, RB1k
Collector-Emitter
Breakdown Voltage
V(BR)CEO 150
180
V
IC=10mA*
Emitter-Base Breakdown
V(BR)EBO 6
8
Voltage
V
IE=100A
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
ICER
R 1k
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
50
nA
VCB=200V
1
A
VCB=200V,
Tamb=100°C
50
nA
VCB=200V
1
A
VCB=200V,
Tamb=100°C
10
nA
VEB=6V
20
40
mV IC=100mA, IB=5mA*
35
65
mV IC=500mA, IB=50mA*
60
110 mV IC=1A, IB=100mA*
260 355 mV IC=5A, IB=500mA*
1250 mV IC=5A, IB=500mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.1 V
IC=5A, VCE=5V*
Static Forward
Current Transfer
Ratio
Transition Frequency
hFE
100 200
100 200 300
15
30
10
IC=10mA, VCE=5V
IC=1A, VCE=5V*
IC=5A, VCE=5V*
IC=10A, VCE=5V*
fT
90
MHz IC==100mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
22
pF
Switching Times
ton
toff
66
ns
2130
ns
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
VCB=10V, f=1MHz
IC=1A, IB1=100mA
IB2=100mA, VCC=50V
78
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