FZT717(2006) View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
FZT717 Datasheet PDF : 6 Pages
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FZT717
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation
voltage
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
Base-emitter saturation
voltage
VBE(sat)
Base-emitter turn-on voltage VBE(on)
Static forward current transfer hFE
ratio
Transition frequency
Output capacitance
Switching times
fT
COBO
ton
toff
Min.
-12
-12
-5
300
300
160
60
45
80
Typ. Max. Unit Conditions
V IC = 100µA
V IC = 10mA
V IE = 100µA
-100
-100
-20
-150
-320
-1050
nA VCB = -10V
nA VEB = -4V
mV IC =-0.1A, IB =-10mA (*)
IC =-1A, IB =-10mA(*)
IC =-3A, IB =-50mA(*)
mV IC =-3A, IB =-50mA(*)
-1000 mV IC =-3A, VCE =-2V(*)
IC =-10mA, VCE =-2V(*)
IC =-100mA, VCE =-2V(*)
IC =-3A, VCE =-2V(*)
IC =-8A, VCE =-2V(*)
IC =-10A, VCE =-2V(*)
110
MHz IC =-50mA, VCE =-10V
f = 100MHz
21
30
pF VCB =-10V, f = 1MHz
70
ns VCC =-6V, IC =-2A
130
ns IB1 = IB2 =50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle Յ2%
Issue 2 - September 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com
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