A Product Line of
Diodes Incorporated
FZT853
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Symbol
Min
BVCBO
200
BVCER
200
BVCEO
100
BVEBO
7
ICBO
−
−
ICER
−
−
IEBO
−
100
100
hFE
50
20
−
VCE(sat)
−
−
VBE(sat)
−
VBE(on)
−
Current Gain-Bandwidth Product (Note 9)
fT
−
Output Capacitance (Note 9)
Switching Times
Cobo
−
ton
−
toff
−
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Typ
300
300
120
8.1
<1
−
<1
−
<1
200
200
100
30
14
100
250
1050
900
130
35
50
1650
Max
−
−
−
−
10
1
10
1
10
−
300
−
−
50
150
340
1250
1100
−
−
−
−
Unit
V
V
V
V
nA
µA
nA
µA
nA
−
mV
mV
mV
MHz
pF
ns
Test Condition
IC = 100µA
IC = 1µA, RB ≤ 1kΩ
IC = 1mA
IE = 100µA
VCB = 150V
VCB = 150V, TA = +100°C
VCB = 150V, RB ≤ 1kΩ
VCB = 150V, TA = +100°C
VEB = 6V
IC = 10mA, VCE = 2V
IC = 2A, VCE = 2V
IC = 4A, VCE = 2V
IC = 10A, VCE = 2V
IC = 100mA, IB = 5mA
IC = 2A, IB = 100mA
IC = 5A, IB = 500mA
IC = 5A, IB = 500mA
IC = 5A, VCE = 2V
IC = 100mA, VCE = 10V,
f = 50MHz
VCB = 10V, f = 1MHz
IC = 1A, VCC = 10V,
IB1 = -IB2 = 100mA
FZT853
Document Number DS33175 Rev. 3 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated