GA200TS60U View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
GA200TS60U Datasheet PDF : 10 Pages
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GA200TS60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — —
VGE = 0V, IC = 1mA
VCE(on)
Collector-to-Emitter Voltage
— 1.8 2.2
VGE = 15V, IC = 200A
— 1.9 — V VGE = 15V, IC = 200A, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
IC = 1.25mA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 1.25mA
gfe
Forward Transconductance
— 175 — S VCE = 25V, IC = 200A
ICES
Collector-to-Emitter Leaking Current
— — 1.0 mA VGE = 0V, VCE = 600V
— — 10
VGE = 0V, VCE = 600V, TJ = 125°C
VFM
Diode Forward Voltage - Maximum
— 3.7 — V IF = 200A, VGE = 0V
— 3.7 —
IF = 200A, VGE = 0V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
— — 250 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
— 903 1355
VCC = 400V, VGE = 15V
— 125 188 nC IC = 135A
— 306 459
— 342 —
TJ = 25°C
RG1 = 27Ω, RG2 = 0Ω,
— 194 — ns IC = 200A
— 366 —
VCC = 360V
— 213 —
VGE = ±15V
— 12 — mJ
— 16 —
— 28 39
— 20068 —
VGE = 0V
— 1254 — pF VCC = 30V
— 261 —
ƒ = 1 MHz
— 179 —
— 120 —
— 10714 —
ns IC = 200A
A RG1 = 27Ω
µC RG2 = 0Ω
— 1922 — A/µs VCC = 360V
di/dt=1300A/µs
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