GA200TS60U View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

GA200TS60U

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

International Rectifier 

GA200TS60U

240

200

160

120

80

40

0

25

50

75

100

125

150

TC , Case Temperature ( ° C)

3.0

VGE = 15V

80 us PULSE WIDTH

IC =400 A

2.0

IC =200 A

IC =100 A

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (° C)

Fig. 4 - Maximum Collector Current vs. Case

Temperature

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

1

D = 0.50

0.1

0.01

0.0001

0 .2 0

PDM

0.10

0.05

0.02

0.01

S IN G LE P U LS E

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t1 / t 2

t1

t2

2. Peak TJ = PDM x Z thJC + TC

0.001

0.01

0.1

1

10

100

t1, Rectangular Pulse Duration (sec)

A

1000

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4

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