GA200TS60U View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

GA200TS60U

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

International Rectifier 

40000

30000

20000

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

Cies

10000

Coes

Cres

0

1

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

GA200TS60U

20

VCC = 400V

I C = 135A

16

12

8

4

0

0

200

400

600

800

1000

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

40

VCC = 360V

VGE = 15V

TJ = 125 °C

IC = 200A

35

30

25

1000 RGG1=2=7OΩh;RmG2 = 0 Ω

VGE = 15V

VCC = 360V

100

10

IC = 400 A

IC = 200 A

IC = 100 A

20

0

10

20

30

40

50

RG , Gate Resistance (O( hΩm))

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature °( C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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