GS809CMEU View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
GS809CMEU Datasheet PDF : 6 Pages
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GS809C and GS810C
Vishay
formerly General Semiconductor
Absolute Maximum Ratings(1)
Parameter
Symbol
Value
Supply Voltage
Reset/Reset
Input Current, Vcc
Output Current, Reset/Reset
Vcc
6.0
–0.3 to (Vcc + 0.3)
20
20
dV/dT (Vcc)
Operating Temperature Range
Storage Temperature Range
Power Dissipation (TA ≤ 70°C)
SOT-23 (Derate 4mW/°C above 70°C)
100
TA
–40 to +85
Tstg
–65 to +150
PD
260
Note: (1) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
Unit
V
V
mA
mA
V/µS
°C
°C
mW
Electrical Characteristics TA = 25°C unless otherwise noted.
Parameter
Symbol
Test Conditions
Min
Vcc Range
1
VRANGE
TA = –40 to +85°C
1
Supply Current
Vcc = 3.0V
–
ICC
Vcc=3.0V, TA= –40 to +85°C
–
Reset Threshold
VTHNOM–1.5%
VTH
TA = –40 to +85°C VTHNOM–2.0%
Threshold Hysteresis
VTH HIST
Reset Threshold
Temperature Coefficient
–
Reset Output Voltage Low
809C/810C
809C Vcc < VTH min
VOL
810C Vcc > VTH max
TA = –40 to +85°C
–
ISINK = 1.2mA
Reset Output Voltage High
809C/810C
VOH
809C Vcc > VTH max
810C Vcc < VTH min
TA = –40 to +85°C
ISOURCE = 0.5mA
0.8VCC
VCC to Reset Delay
TD1
VCC = VTH – 100mV
TA = –40 to +85°C
–
Reset Timeout Period
TD2
TA = –40 to +85°C TD2NOM–35%
Typ
–
–
–
–
VTHNOM
VTHNOM
0.4
30
–
–
40
TD2NOM
Max
5.5
5.5
3.0
5.0
VTHNOM+1.5%
VTHNOM+2.0%
Unit
V
µA
V
%VTH
–
ppm/°C
0.5
V
–
V
–
µS
TD2NOM+35%
mS
Document Number 74808
01-Nov-02
www.vishay.com
3
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