GS84118AB-100I View Datasheet(PDF) - Giga Semiconductor
Part Name
Description
Manufacturer
GS84118AB-100I Datasheet PDF : 20 Pages
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GS84118AT/B-166/150/130/100
Package Thermal Characteristics
Rating
Layer Board Symbol TQFP max PBGA max Unit Notes
Junction to Ambient (at 200 lfm)
Junction to Ambient (at 200 lfm)
single
RΘJA
32
four
RΘJA
20
28
°C/W
1,2
18
°C/W
1,2
Notes:
Junction to Case (TOP)
—
RΘJC
7
4
°C/W
3
1. Junction temperature is a function of SRAM power dissapation, package thermal resistance, mounting board temperature, ambient.
Temperature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87.
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
AC Test Conditions
(VDD = 3.135 V–3.6 V, Ta = 0–70°C)
Parameter
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Conditions
VIH = 2.3 V
VIL = 0.2 V
TR = 1 V/ns
1.25 V
1.25 V
Fig. 1& 2
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ.
4. Device is deselected as defined by the Truth Table.
Output load 1
DQ
50W 30pF1
VT = 1.25 V
FIG. 1
Output load 2
2.5 V
DQ
225W
5pF1 225W
FIG. 2
Rev: 1.02 4/2005
9/20
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
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