GT15J331 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

GT15J331

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Toshiba 

2

10

Tc = 25°C

1

10

FRD

0

10

−1

10

Rth (t) – tw

IGBT

−2

10

−3

10

−4

10 −5

−4

−3

−2

−1

0

1

2

10

10

10

10

10 10

10

10

Pulse width tw (s)

GT15J331

6

2006-10-31

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