RMLA00400 View Datasheet(PDF) - Raytheon Company

Part Name

Description

Manufacturer

RMLA00400

40 Gb/s Transimpedance Amplifier

Raytheon Company 

RMLA00400

40 Gb/s Transimpedance Amplifier

Figure 4

Recommended

Assembly Diagram

RF

Input

Vb

Photodetector

Vg1

(Negative)

10000pF

ADVANCED INFORMATION

100pF

L< 0.015”

~ 0.1µF

C

RF

Output

100pF

10000pF

125Ω

5 mil Thick

Alumina

50-Ohm

Vd, Vg2

(Positive)

Recommended

Procedure

for Biasing and

Operation

CAUTION: LOSS OF GATE VOLTAGE (Vg1) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE

AMPLIFIER CHIP.

The following sequence of steps must be followed to properly test the amplifier.

Step 1: Turn off RF input power.

Step 2: Connect the DC supply grounds to the grounds

of the chip carrier. Apply negative gate 1 bias

supply voltage of -5.0 V to Vg1.

Step 3: Apply positive bias supply voltage of +3.5 V to

Vd, Vg2 connection.

Step 4: Adjust gate 1 bias voltage Vg1 to set the

quiescent current of Idq ~ 130 mA.

Step 5: After the bias condition is established, the RF

input signal may now be applied at the

appropriate frequency band. Adjust Vg1 for best

gain flatness.

Step 6: Follow turn-off sequence of:

(i) Turn off RF input power,

(ii) Turn down and off drain voltage (Vd, Vg2),

(iii) Turn down and off gate bias voltage (Vg1).

www.raytheonrf.com

Characteristic performance data and specifications are subject to change without notice.

Revised November 14, 2001

Page 3

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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