H5N2008P View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

H5N2008P

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

H5N2008P

Electrical Characteristics

Item

Symbol Min

Drain to Source breakdown voltage

V(BR)DSS

200

Zero Gate voltage Drain current

IDSS

—

Gate to Source leak current

IGSS

—

Gate to Source cutoff voltage

VGS(off)

3.0

Forward transfer admittance

|yfs|

35

Static Drain to Source on state

resistance

RDS(on)

—

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Total Gate charge

Qg

—

Gate to Source charge

Qgs

—

Gate to Drain charge

Qgd

—

Body-Drain diode forward voltage

VDF

—

Body-Drain diode reverse recovery time

trr

—

Body-Drain diode reverse recovery

Qrr

—

charge

Notes: 4. Pulse test

Typ

—

—

—

—

58

0.020

Max

—

1

±0.1

4.5

—

0.023

Unit

V

µA

µA

V

S

Ω

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

VDS = 200 V, VGS = 0

VGS = ±30 V, VDS = 0

VDS = 10 V, ID = 1 mA

ID = 48 A, VDS = 10 V Note4

ID = 48 A, VGS = 10 VNote4

4900

—

pF VDS = 25 V

850

—

pF VGS = 0

95

—

pF f = 1 MHz

60

—

ns ID = 48 A

370

—

ns VGS = 10 V

220

—

ns RL = 2.1 Ω

270

—

ns Rg = 10 Ω

98

—

nC VDD = 160 V

25

—

nC VGS = 10 V

44

—

nC ID = 96 A

1.1

1.7

V IF = 96 A, VGS = 0 Note4

180

—

ns IF = 96 A, VGS = 0

1.5

—

µC diF/dt = 100 A/µs

Rev.3.00 Nov.24.2004 page 2 of 6

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