H5N2008P View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
H5N2008P Datasheet PDF : 7 Pages
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H5N2008P
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V 7 V
6.5 V
80
6V
60
40
5.5 V
20
VGS = 5 V
Pulse Test
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
8
Pulse Test
6
4
2
ID = 96 A
48 A
20 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Maximum Safe Operation Area
1000
300
100
30
10
PW =
Operation in
10
1 ms 1001µ0sµs
ms (1shot)
this area is
3 limited by RDS(on)
1
0.3
DC Operation
0.1
(Tc = 25°C)
0.03
Ta = 25°C
0.01
1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
VGS = 10 V, 15 V
0.05
0.02
0.01
0.005
0.002
0.001
1
Pulse Test
3 10 30 100 300 1000
Drain Current ID (A)
Rev.3.00 Nov.24.2004 page 3 of 6
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