H5N2007FN View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
H5N2007FN Datasheet PDF : 8 Pages
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H5N2007FN
Static Drain to Source on State Resistance
vs. Temperature
0.200
Pulse Test
V GS = 10 V
0.160
0.120
0.080
22.5 A
I D = 45 A
0.040
12.5 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 100 A / µs
10
0.1 0.3
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
I D= 45 A
VGS
400 V DS = 50 V
16
100 V
160 V
300
12
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = –25°C
20
10
25°C
5
2
75°C
1
V DS = 10 V
0.5
Pulse Test
0.2
0.2 0.5 1 2 5 10 20
Drain Current ID (A)
50 100
10000
Typical Capacitance vs.
Drain to Source Voltage
5000
2000
Ciss
1000
500
Coss
200
100
50
Crss
20
VGS = 0
f = 1 MHz
10
0
20
40 60 80 100
Drain to Source Voltage VDS (V)
Switching Characteristics
10000
VGS = 10 V, V DD = 100 V
PW = 5 µs, duty < 1 %
RG=10 Ω
1000
tf
tr
200 VDD
8
100
V DS = 160 V
4
100 V
50 V
0
0
20 40 60 80 100
Gate Charge Qg (nC)
t d(off)
100
tf
10
0.1
t d(on)
tr
0.3 1 3 10 30 100
Drain Current ID (A)
Rev.1.00, May.28.2004, page 4 of 7
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