H5N2003P View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
H5N2003P Datasheet PDF : 9 Pages
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H5N2003P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
TO-3P
D
G
S
1
2
3
REJ03G0235-0100Z
Rev.1.00
Apr.09.2004
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
60
240
60
240
40
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
(Ta = 25°C)
Rev.1.00, Apr.09.2004, page 1 of 6
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