H5N2003P View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

H5N2003P

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

H5N2003P

Electrical Characteristics

Item

Drain to Source breakdown voltage

Zero Gate voltage drain current

Gate to Source leak current

Gate to Source cutoff voltage

Forward transfer admittance

Static Drain to Source on state

resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total Gate charge

Gate to Source charge

Gate to Drain charge

Body-Drain diode forward voltage

Body-Drain diode reverse recovery time

Body-Drain diode reverse recovery

charge

Notes: 4. Pulse test

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

|yfs|

RDS(on)

Min

200

—

—

3.0

26

—

Ciss

—

Coss —

Crss

—

td(on) —

tr

—

td(off) —

tf

—

Qg

—

Qgs

—

Qgd

—

VDF

—

trr

—

Qrr

—

Typ

—

—

—

—

44

0.032

Max

—

1

±0.1

4.0

—

0.042

Unit

V

µA

µA

V

S

Ω

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

VDS = 200 V, VGS = 0

VGS = ±30 V, VDS = 0

VDS = 10 V, ID = 1 mA

ID = 30 A, VDS = 10 V Note4

ID = 30 A, VGS = 10 VNote4

5150 —

660

—

110

—

65

—

260

—

200

—

180

—

132

—

30

—

60

—

1.0

1.5

190

—

1.4

—

pF VDS = 25 V

pF VGS = 0

pF f = 1 MHz

ns ID = 30 A

ns VGS = 10 V

ns RL = 3.33 Ω

ns Rg = 10 Ω

nC VDD = 160 V

nC VGS = 10 V

nC ID = 60 A

V

IF = 60 A, VGS = 0 Note4

ns IF = 60 A, VGS = 0

µC diF/dt = 100 A/µs

Rev.1.00, Apr.09.2004, page 2 of 6

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