H5N2003P-E View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
H5N2003P-E Datasheet PDF : 9 Pages
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H5N2003P
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
8V
Pulse Test
7V
80
60
6V
40
20
VGS = 5 V
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
4
Pulse Test
3
2
ID = 60 A
30 A
1
10 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Maximum Safe Operation Area
1000
300
100
10 µs
PW
30
10
= 10 ms (1shot)
3
Operation in
1 this area is
limited by RDS(on)
0.3
0.1 Ta = 25°C
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
200
VDS = 10 V
Pulse Test
160
120
80
40
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
VGS = 10 V, 15 V
0.05
0.02
0.01
0.005
0.002
0.001
1
Pulse Test
3 10 30 100 300 1000
Drain Current ID (A)
Rev.1.00, Apr.09.2004, page 3 of 6
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