H5N2004DL View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

H5N2004DL

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

H5N2004DL, H5N2004DS

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance: R DS (on) = 0.38 Ω typ.

• Low leakage current: IDSS = 1 µA max (at VDS = 200 V)

• High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)

• Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A)

• Avalanche ratings

REJ03G1103-0200

(Previous: ADE-208-1372)

Rev.2.00

Sep 07, 2005

Outline

RENESAS Package code: PRSS0004ZD-B

(Package name: DPAK (L)-(2) )

4

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (S) )

D

4

123

123

G

S

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00 Sep 07, 2005 page 1 of 7

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