DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

H5N2004DL View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
H5N2004DL Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
H5N2004DL, H5N2004DS
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
6
4
10 V
2 5V
VGS = 0 V
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
VDS = 10 V
0
–50 0
50
100 150 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
10
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 100 V
Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
90%
td(off)
10%
tf
Rev.2.00 Sep 07, 2005 page 5 of 7

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]