H5PS1G83EFR-E3 View Datasheet(PDF) - Hynix Semiconductor

Part Name

Description

Manufacturer

H5PS1G83EFR-E3

1Gb DDR2 SDRAM

Hynix Semiconductor 

H5PS1G43EFR

H5PS1G83EFR

H5PS1G63EFR

3.3 Output Buffer Characteristics

3.3.1 Output AC Test Conditions

Symbol

Parameter

VOTR Output Timing Measurement Reference Level

SSTL_18 Class II

0.5 * VDDQ

Units

V

Notes

1

Note:

1. The VDDQ of the device under test is referenced.

3.3.2 Output DC Current Drive

Symbol

IOH(dc)

IOL(dc)

Parameter

Output Minimum Source DC Current

Output Minimum Sink DC Current

SSTl_18

- 13.4

13.4

Units

mA

mA

Notes

1, 3, 4

2, 3, 4

Note:

1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ

and VDDQ - 280 mV.

2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.

3. The dc value of VREF applied to the receiving device is set to VTT

4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test

device drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are

delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating

point (see Section 3.3) along a 21 ohm load line to define a convenient driver current for measurement.

Rev. 0.4 / Nov 2008

14

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