H5PS1G83EFR View Datasheet(PDF) - Hynix Semiconductor

Part Name

Description

Manufacturer

H5PS1G83EFR

1Gb DDR2 SDRAM

Hynix Semiconductor 

1. Description

Release

H5PS1G83EFR Series

1.1 Device Features & Ordering Information

1.1.1 Key Features

• VDD = 1.8 +/- 0.1V

• VDDQ = 1.8 +/- 0.1V

• All inputs and outputs are compatible with SSTL_18 interface

• 8 banks

• Fully differential clock inputs (CK, /CK) operation

• Double data rate interface

• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)

• Differential Data Strobe (DQS, DQS)

• Data outputs on DQS, DQS edges when read (edged DQ)

• Data inputs on DQS centers when write (centered DQ)

• On chip DLL align DQ, DQS and DQS transition with CK transition

• DM mask write data-in at the both rising and falling edges of the data strobe

• All addresses and control inputs except data, data strobes and data masks latched on the rising

edges of the clock

• Programmable CAS latency 3, 4, 5 and 6 supported

• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported

• Programmable burst length 4/8 with both nibble sequential and interleave mode

• Internal eight bank operations with single pulsed RAS

• Auto refresh and self refresh supported

• tRAS lockout supported

• 8K refresh cycles /64ms

• JEDEC standard 60ball FBGA(x8)

• Full strength driver option controlled by EMR

• On Die Termination supported

• Off Chip Driver Impedance Adjustment supported

• Self-Refresh High Temperature Entry

Rev. 1.0 / Aug 2009

4

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