H5PS1G83EFR View Datasheet(PDF) - Hynix Semiconductor

Part Name

Description

Manufacturer

H5PS1G83EFR

1Gb DDR2 SDRAM

Hynix Semiconductor 

2. Maximum DC Ratings

2.1 Absolute Maximum DC Ratings

Symbol

Parameter

VDD Voltage on VDD pin relative to Vss

VDDQ Voltage on VDDQ pin relative to Vss

VDDL Voltage on VDDL pin relative to Vss

VIN, VOUT Voltage on any pin relative to Vss

TSTG Storage Temperature

II

Input leakage current; any input 0V VIN VDD;

all other balls not under test = 0V)

IOZ

Output leakage current; 0V VOUT VDDQ; DQ

and ODT disabled

Release

H5PS1G83EFR Series

Rating

- 1.0 V ~ 2.3 V

- 0.5 V ~ 2.3 V

- 0.5 V ~ 2.3 V

- 0.5 V ~ 2.3 V

-55 to +100

-2 uA ~ 2 uA

-5 uA ~ 5 uA

Units

V

V

V

V

°C

Notes

1

1

1

1

1, 2

uA

uA

Note:

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-

ing conditions for extended periods may affect reliability.

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement

conditions. please refer to JESD51-2 standard.

2.2 Operating Temperature Condition

Symbol

TOPER

Parameter

Operating Temperature

Commercial

Industrial

Rating

0 to 95

-40 to 95

Units Notes

°C

1,2

Note:

1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measure-

ment conditions, please refer to JESD51-2 standard.

2. At 85~95° TOPER , Double refresh rate(tREFI: 3.9us) is required, and to enter the self refresh mode at this tem-

perature range it must be required an EMRS command to change itself refresh rate.

Rev. 1.0 / Aug 2009

9

Share Link: