H7N0308LD View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
H7N0308LD Datasheet PDF : 8 Pages
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H7N0308LD, H7N0308LS, H7N0308LM
Main Characteristics
Power vs. Temperature Derating
160
120
80
40
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
Pulse Test
80
4.5 V
3.5 V
60
3V
40
20
VGS = 2.5 V
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
200
ID = 50 A
100
20 A
0
10 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.5.00 Apr 07, 2006 page 3 of 7
Maximum Safe Operation Area
500
10 µs
100
1 ms 100 µs
10
DC OperationPW = 10 ms
1
Operation in
this area is
limited by RDS (on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
80
60
40
Tc = 75°C
25°C
20
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
VGS = 4.5 V
3
10 V
1
0.3
0.1
1 3 10 30 100 300 1000
Drain Current ID (A)
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