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Part Name
Description
H7P0601DL View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
H7P0601DL
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
H7P0601DL Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
H7P0601DL, H7P0601DS
Silicon P Channel MOS FET
High Speed Power Switching
Features
•
Low on-resistance
R
DS(on)
= 40 m
Ω
typ.
•
Low drive current
•
4.5 V gate drive device can driven from 5 V source
Outline
REJ03G0044-0100Z
Rev.1.00
Aug.05.2003
D
G
S
DPAK-2
4
DPAK-S
4
12
3
12
3
H7P0601DS
H7P0601DL
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, Aug.05.2003, page 1 of 10
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