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HA16114FP View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
Manufacturer
HA16114FP
Hitachi
Hitachi -> Renesas Electronics Hitachi
HA16114FP Datasheet PDF : 38 Pages
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HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
4. PWM Output Circuit and Power MOSFET Driving Method
These ICs have built-in totem-pole push-pull drive circuits that can drive a power MOS FET as shown in
figure 4.1. The power MOS FET can be driven directly through a gate protection resistor.
If VIN exceeds the gate breakdown voltage of the power MOS FET additional protective measures should
be taken, e.g. by adding Zener diodes as shown in figure 4.2.
To drive a bipolar power transistor, the base should be protected by voltage and current dividing resistors
as shown in figure 4.3.
VIN
Bias
circuit
Totem-pole output circuit
OUT
To CL
RG
Gate protection
resistor
P.GND
Example:
P-channel power MOSFET
VO
Figure 4.1 Connection of Output Stage to Power MOS FET
VIN
RG
VO
OUT
GND
DZ
Example: N-channel power MOSFET
Figure 4.2 Gate Protection by Zener Diodes
VIN
Base current
limiting resistor
VO
OUT
GND
Base discharging resistor
Example: NPN power transistor
Figure 4.3 Driving a Bipolar Power Transistor
12

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