Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HC1417
█ APPLICATIONS
High Frequency Amplifier Application.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………20V
VCEO——Collector-Emitter Voltage……………………………15V
VEBO ——Emitter -Base Voltage………………………………3V
IC——Collector Current……………………………………30mA
TO-92
1―Emitter , E
2―Collector,C
3―Base, B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
fT Current Gain-Bandwidth Product
Cob Output Capacitance
NF Noise Figure
20
15
3
54
100
300
1.4
5.5
0.1
0.1
146
0.5
1.42
V IC=100μA,IE=0
V IC=1mA,IB=0
V IE=100μA,IC=0
μA VCB=10V, IE=0
μA VEB=3V, IC=0
VCE=6V, IC=1mA
V IC=10mA, IB=1mA
V IC=10mA, IB=1mA
MHz VCE=10V, IC=50mA
pF VCB=10V,IE=0,f=1MHz
dB VCE=6V,IC=1mA,RG=50O
█ hFE Classification
F
G
H
54—80
72--108
97--146